any changing of specification will not be informed individual MMDT2222A npn silicon multi-chip transistor r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com ele k troni sche bauelemente p o w e r d i s s i p a t i o n * features p c m : 0 . 1 5 w ( t a m p . = 2 5 c ) c o l l e c t o r c u r r e n t i c m : 0 . 6 a c o l l e c t o r - b a s e v o l t a g e v ( b r ) c b o : 7 5 v o p e r a t i n g & s t o r a g e j u n c t i o n t e m p e r a t u r e t j , t s t g : - 5 5 c ~ + 1 5 0 c o o o p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n m a x u n i t collector-base breakdown voltage v (br)cbo ic= 10 a i e =0 75 v collector-emitter breakdown voltage v (br)ceo ic= 10ma i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a i c =0 6 v collector cut-off current i cbo v cb =60 v , i e =0 0. 01 a emitter cut-off current i ebo v eb = 3v , i c =0 0. 01 a h fe(1) v ce =10v, i c = 0.1ma 35 h fe(2) v ce =10v, i c = 1ma 50 h fe(3) v ce =10v, i c = 10ma 75 h fe(4) v ce =10v, i c = 150ma 100 300 h fe(5) v ce =10v, i c = 500ma 40 dc current gain h fe(6) v ce =1v, i c = 150ma 35 v ce (sat)1 i c =150 ma, i b = 15ma 0.3 v collector-emitter saturation voltage v ce (sat)2 i c =500 ma, i b = 50ma 1 v v be (sat)1 i c =150 ma, i b =15ma 0.6 1.2 v base-emitter saturation voltage v be (sat)2 i c =500 ma, i b = 50ma 2 v transition frequency f t v ce =20v, i c = 20ma f= 100mhz 300 mhz output capacitance c ob v cb =10v, i e = 0 f= 1mhz 8 pf input capacitance c ib v eb =0.5v, i c = 0 f= 1mhz 25 pf noise figure nf v ce =10v, i c =100 a f= 1khz,rs=1k 4 db delay time t d 10 ns rise time t r v cc =30v, i c =150ma v be(off) =0.5v,i b1 =15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 = i b2 = 15ma 60 ns e l e c t r i c a l c h a r a c t e r i s t i c s ( t a m b = 2 5 o c u n l e s s o t h e r w i s e s p e c i f i e d ) marking: k1p 01 -jan-2006 rev. b page 1 of 4 s o t - 3 6 3 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) . 0 1 4 ( 0 . 3 5 ) . 0 0 6 ( 0 . 1 5 ) . 0 8 7 ( 2 . 2 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 5 5 ( 1 . 4 0 ) . 0 4 7 ( 1 . 2 0 ) . 0 2 6 t y p ( 0 . 6 5 t y p ) . 0 9 6 ( 2 . 4 5 ) . 0 8 5 ( 2 . 1 5 ) . 0 2 1 r e f ( 0 . 5 2 5 ) r e f . 0 1 8 ( 0 . 4 6 ) . 0 1 0 ( 0 . 2 6 ) . 0 0 6 ( 0 . 1 5 ) . 0 0 3 ( 0 . 0 8 ) . 0 5 3 ( 1 . 3 5 ) . 0 4 5 ( 1 . 1 5 ) . 0 4 3 ( 1 . 1 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 3 9 ( 1 . 0 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 0 4 ( 0 . 1 0 ) . 0 0 0 ( 0 . 0 0 ) 8 o o 0 c 1 b 2 e 2 e 1 b 1 c 2
any changing of specification will not be informed individual MMDT2222A npn silicon multi-chip transistor figure 1. turnon time figure 2. turnoff time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v 2 v < 2 ns 0 1.0 to 100 m s, d uty c ycle 2.0% 1 k w + 30 v 200 c s * < 10 pf +16 v 14 v 0 < 20 ns 1.0 to 100 m s, d uty c ycle 2.0% 1 k + 30 v 200 c s * < 10 pf 4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , c ollector c urrent (ma) figure 3. dc current gain h f e , dc c urrent g ain v c e , c ollector e mitter v oltage (v) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , b ase c urrent (ma) figure 4. collector saturation region http://www.secosgmbh.com elektronische bauelemente 01 -jan-2006 rev. b page 2 of 4
any changing of specification will not be informed individual MMDT2222A npn silicon multi-chip transistor figure 5. turn on time i c , c ollector c urrent (ma) 70 100 200 50 t, t ime (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, t ime (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. t ur n off t ime i c , collector current (ma) 10 20 70 1005.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s 1/8 t f t f figure 7. frequency effects f, f requency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , s ource r esistance (ohms) n f , n oise f igure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 n f , n oise f igure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 w 500 m a, r s = 200 w 100 m a, r s = 2.0 k w 50 m a, r s = 4.0 k w f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances r everse v oltage (v) 3.0 5.0 7.0 10 2.0 0.1 c apacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. currentgain bandwidth product i c , c ollector c urrent (ma) 70 100 200 300 50 500 f t , c urrent g ain b andwidth p roducts (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c http://www.secosgmbh.com elektronische bauelemente 01 -jan-2006 rev. b page 3 of 4
any changing of specification will not be informed individual MMDT2222A npn silicon malti-chip transistor figure 11. aono voltages i c , collect current (ma) 0.4 0.6 0.8 1.0 0.2 v , v oltage (v) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , c ollect c urrent (ma) 0.5 0 +0.5 c oefficient (mv/ c) 1.0 1.5 2.5 r vc for v ce(sat) r vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v 2.0 0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500 http://www.secosgmbh.com elektronische bauelemente 01 -jan-2006 rev. b page 4 of 4
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